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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) C KTD1411 EPITAXIAL PLANAR NPN TRANSISTOR A B E F G D H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 60 10 4 0.5 15 150 -55 150 UNIT V V V A A W N J K L M O 1 2 3 P Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Base-Emitter ) TEST CONDITION VCB=80V, IE=0 VEB=10V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A VCE=2V, IC=3A IC=3A, IB=30mA IC=3A, IB=30mA MIN. 60 3000 1000 TYP. MAX. 20 100 1.5 2.0 V UNIT A A V ICBO IEBO SYMBOL V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE(sat) Saturation Voltage 2003. 7. 24 Revision No : 2 1/2 KTD1411 h FE - I C VCE =2V VCE(sat) - I C SATURATION VOLTAGE VCE(sat) (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 0.3 0.5 1 3 5 10 COMMON EMITTER I C /I B =100 30k DC CURRENT GAIN h FE 10k 5k 3k 1k 500 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA I C - V BE COLLECTOR CURRENT I C (A) 4 COLLECTOR CURRENT I C (A) VCE =3V 10 I C MAX.(PULSED)* S 100 5 3 I C MAX.(CONTINUOUS) D O TI RA C PE 5 O =2 C Tc 10m * 1m 3 S* S* N 2 1 0.5 0.3 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0 0 0.5 1 1.5 2 0.1 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION PC (W) P C - Ta 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 Tc=Ta INFINITE HEAT SINK AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 2 VCEO MAX. 1 2/2 |
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